IGBT Characteristics Apparatus

Share this:
Product Details:
Usage/Application Laboratory
Model Name/Number AT 550
Country of Origin Made in India

The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

 

Additional Information:

  • Delivery Time: 5 to 7 Days
Scroll to Top